? by semikron 0898 b 16 ? 31 absolute maximum ratings symbol conditions 1) values units inverter v ces v ges i c i cm i f = ?i c i fm = ?i cm t heatsink = 25 / 80 c t p < 1 ms; t heatsink = 25 / 80 c t heatsink = 25 / 80 c t p < 1 ms; t heatsink = 25 / 80 c 600 20 50 / 35 100 / 70 57 / 38 114 / 76 v v a a a a bridge rectifier v rrm i d i fsm i 2 t t heatsink = 80 c t p = 10 ms; sin. 180 , t j = 25 c t p = 10 ms; sin. 180 , t j = 25 c 800 25 370 680 v a a a 2 s t j t stg v isol ac, 1 min. ? 40 . . . + 150 ? 40 . . . + 125 2500 c c v characteristics symbol conditions 1) min. typ. max. units igbt - inverter v cesat t d(on) t r t d(off) t f e on + e off c ies r thjh i c = 50 a t j = 25 (125) c v cc = 300 v; v ge = 15 v i c = 50 a; t j = 125 c r gon = r goff = 22 ? inductive load v ce = 25 v; v ge = 0 v, 1 mhz per igbt ? ? ? ? ? ? ? ? 2,1(2,2) 60 80 330 550 7,3 2,8 ? 2,7(2,8) 120 160 500 830 ? ? 1,0 v ns ns ns ns mj nf k/w igbt - chopper * v cesat t d(on) t r t d(off) t f e on + e off c ies r thjh i c = 30 a t j = 25 (125) c v cc = 300 v; v ge = 15 v i c = 30 a; t j = 125 c r gon = r goff = 33 ? inductive load v ce = 25 v; v ge = 0 v, 1 mhz per igbt ? ? ? ? ? ? ? ? 2,1(2,2) 50 80 250 500 4,0 1,6 ? 2,7(2,8) 100 160 370 750 ? ? 1,4 v ns ns ns ns mj nf k/w diode 2) - inverter & chopper v f = v ec v to r t i rrm q rr e off r thjh i f = 50 a t j = 25 (125) c t j = 125 c t j = 125 c i f = 50 a, v r = ? 300 v di f /dt = ? 800 a/ s v ge = 0 v, t j = 125 c per diode ? ? ? ? ? ? ? 1,45(1,4) 0,85 11 50 5,0 1,5 ? 1,7(1,7) 0,9 16 ? ? ? 1,2 v v m ? a c mj k/w diode - rectifier v f r thjh i f = 25 a, t j = 25 c per diode ? ? 1,2 ? ? 2,6 v k/w temperature sensor r ts t = 25 / 100 c 1000 / 1670 ? mechanical data m 1 case case to heatsink, si units mechanical outline see page b 16 ? 9 2? m3 2,5 nm skiip 31 nab 06 miniskiip 3 semikron integrated intelligent power skiip 31 nab 06 3-phase bridge rectifier + braking chopper + 3-phase bridge inverter case m3 ul recognized file no. e63532 specification of temperature sensor see part a common characteristics see page b16?3 options also available with faster igbts (type ... 063), data sheet on request 1) t heatsink = 25 c, unless otherwise specified 2) cal = controlled axial lifetime technology (soft and fast recovery) * for diagrams of the chopper igbt please refer to skiip 22 nab 06
b 16 C 32 0698 ? by semikron fig. 3 turn-on /-off energy = f (i c ) fig. 4 turn-on /-off energy = f (r g ) t j = 125 c v ce = 300 v v ge = 15 v i c = 50 a t j = 125 c v ce = 300 v v ge = 15 v r g = 22 w i cpuls = 50 a v ge = 0 v f = 1 mhz fig. 1 typ. output characteristic, t p = 80 m s; 25 c fig. 2 typ. output characteristic, t p = 80 m s; 125 c fig. 5 typ. gate charge characteristic fig. 6 typ. capacitances vs. v ce
? by semikron 0698 b 16 C 3 fig. 9 turn-off safe operating area (rbsoa) of the igbt fig. 10 safe operating area at short circuit of the igbt t j = 150 c v ge = 15 v t sc = 10 m s l ext < 25 nh t j = 150 c v ge = 15 v fig. 7 rated current of the igbt i cop / i c = f (t h ) t j = 150 c v ge = 3 15 v 0 0.2 0.4 0.6 0.8 1.0 1.2 0 25 50 75 100 125 150 i cop /i c mini0607 t h [c] fig. 11 typ. freewheeling diode forward characteristic fig. 12 forward characteristic of the input bridge diode 2. common characteristics of miniskiip miniskiip 600 v
miniskiip 3 skiip 30 nab 06 skiip 31 nab 06 skiip 32 nab 06 skiip 30 nab 12 skiip 31 nab 12 skiip 32 nab 12 circuit case m3 layout and connections for the customers printed circuit board
|
